APT60GF60JU2 APT60GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 1-8 isotop absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v i c1 t c = 25c 93 i c2 continuous collector current t c = 95c 60 i cm pulsed collector current t c = 25c 360 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 378 w i lm rbsoa clamped inductive load current r g =11 ? t c = 25c 360 a if av maximum average forward current duty cycle=0.5 t c = 80c 30 if rms rms forward current (square wave, 50% duty) 39 a these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. k e c g v ces = 600v i c = 60a @ tc = 95c application ac and dc motor control switched mode power supplies power factor correction brake switch features non punch through (npt) thunderbolt igbt ? - low voltage drop - low tail current - switching frequency up to 100 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated isotop ? package (sot-227) very low stray inductance high level of integration benefits outstanding performance at high frequency operation stable temperature behavior very rugged direct mounting to heatsink (isolated package) low junction to case thermal resistance easy paralleling due to positive tc of vcesat isotop ? boost chopper npt igbt k c g e
APT60GF60JU2 APT60GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 2-8 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 0.5ma 600 v t j = 25c 80 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 2000 a t j = 25c 2.0 2.5 v ce(on) collector emitter on voltage v ge =15v i c = 60a t j = 125c 2.8 v v ge(th) gate threshold voltage v ge = v ce , i c = 500a 3 4 5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3125 3590 c oes output capacitance 310 450 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 180 310 pf q g total gate charge 257 410 q ge gate ? emitter charge 19 30 q gc gate ? collector charge v gs = 15v v bus = 300v i c = 60a 120 180 nc t d(on) turn-on delay time 20 40 t r rise time 95 190 t d(off) turn-off delay time 315 470 t f fall time resistive switching (25c) v ge = 15v v bus = 300v i c = 60a r g = 5 245 490 ns t d(on) turn-on delay time 26 50 t r rise time 63 125 t d(off) turn-off delay time 395 590 t f fall time 68 140 ns e ts total switching losses inductive switching (25c) v ge = 15v v bus = 400v i c = 60a r g = 5 3.4 7 mj t d(on) turn-on delay time 25 50 t r rise time 59 120 t d(off) turn-off delay time 430 650 t f fall time 65 130 ns e on turn-on switching energy 1.6 3.2 e off turn-off switching energy 2.4 4.8 e ts total switching losses inductive switching (150c) v ge = 15v v bus = 400v i c = 60a r g = 5 4.0 8.0 mj
APT60GF60JU2 APT60GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 3-8 diode ratings and characteristics symbol characteristic test conditions min typ max unit i f = 30a 1.6 1.8 i f = 60a 1.9 v f diode forward voltage i f = 30a t j = 125c 1.4 v v r = 600v t j = 25c 250 i rm maximum reverse leakage current v r = 600v t j = 125c 500 a c t junction capacitance v r = 200v 44 pf reverse recovery time i f =1a,v r =30v di/dt =100a/s t j = 25c 23 t j = 25c 85 t rr reverse recovery time t j = 125c 160 ns t j = 25c 4 i rrm maximum reverse recovery current t j = 125c 8 a t j = 25c 130 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 700 nc t rr reverse recovery time 70 ns q rr reverse recovery charge 1300 nc i rrm maximum reverse recovery current i f = 30a v r = 400v di/dt =1000a/s t j = 125c 30 a thermal and package characteristics symbol characteristic min typ max unit igbt 0.33 r thjc junction to case diode 1.21 r thja junction to ambient (igbt & diode) 20 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j ,t stg storage temperature range -55 150 t l max lead temp for soldering:0.063? from case for 10 sec 300 c torque mounting torque (mounting = 8-32 or 4mm machine and terminals = 4mm machine) 1.5 n.m wt package weight 29.2 g
APT60GF60JU2 APT60GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 4-8 typical igbt performance curve
APT60GF60JU2 APT60GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 5-8
APT60GF60JU2 APT60GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 6-8 typical diode performance curve
APT60GF60JU2 APT60GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 7-8
APT60GF60JU2 APT60GF60JU2 ? rev 0 april, 2004 apt website ? htt p :/ / www.advanced p ower.com 8-8 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) emitter terminals are shorted internally. current handling capability is equal for either emitter terminal. isotop ? is a registered trademark of sgs thomson apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved. emitter gate collector cathode
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